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Silicon Switching Diode Array
For high-speed switching q Common cathode
q
BAV 70
Type BAV 70
Marking A4s
Ordering Code (tape and reel) Q68000-A6622
Pin Configuration
Package1) SOT-23
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, TS = 35 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

Symbol VR VRM IF IFS Ptot Tj Tstg
Values 70 70 200 4.5 250 150 - 65 ... + 150
Unit V mA A mW C
600 460
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2.
Semiconductor Group
1
5.91
BAV 70
Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 A Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 70 V VR = 25 V, TA = 150 C VR = 70 V, TA = 150 C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Test circuit for reverse recovery time CD trr - - - - 1.5 6 pF ns V(BR) VF - - - - IR - - - - - - 2.5 30 50 - - - - 715 855 1000 1250
A
Values typ. max.
Unit
70
-
-
V mV
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50
Oscillograph:
R = 50 tr = 0.35 ns C 1 pF
Semiconductor Group
2
BAV 70
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF) TA = 25 C
Peak forward current IFM = f (t) TA = 25 C
Semiconductor Group
3
BAV 70
Forward voltage VF = f (TA)
Semiconductor Group
4

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